| 摘要 |
A SAW device 11 has an IDT which is provided on the principal surface of a quartz crystal substrate 12 having Euler angles (−1.5°≦̸&phgr;≦̸1.5°, 117°≦̸&thetas;≦̸142°, 42.79°≦̸|ψ|≦̸49.47°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. The wavelength λ of the SAW and the depth G of the inter-electrode-finger grooves satisfy 0.01λ≦̸G. An IDT line occupancy &eegr; and the depth G of the inter-electrode-finger grooves satisfy a predetermined relational expression. The IDT line occupancy &eegr; and a reflector line occupancy &eegr;r satisfy the relationship &eegr;<&eegr;r. Therefore, an excellent frequency-temperature characteristic and a high Q value in an operation temperature range are realized simultaneously.
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