USING BEAM BLOCKERS TO PERFORM A PATTERNED IMPLANT OF A WORKPIECE
摘要
Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second, current regions. These current regions may be unequal, The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
申请公布号
WO2012033697(A2)
申请公布日期
2012.03.15
申请号
WO2011US50156
申请日期
2011.09.01
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;DISTASO, DANIEL;LOW, RUSSELL, J.