发明名称 |
METHOD OF ION IMPLANTATION AND SYSTEM THE SAME |
摘要 |
PURPOSE: An ion injection method and apparatus are provided to precisely form ion implantation distribution by adjusting the beam current density distribution of an ion beam feeder. CONSTITUTION: An ion injection apparatus starts a beam starting operation of a plurality of ion beam feeders(50). The ion injection apparatus individually detects beam starting operation completion of a plurality of ion beam feeders(51). The ion injection apparatus sorts the ion beam feeder based on the result of a beam starting operation completion detection process(52). The ion injection apparatus adjusts the beam current density distribution of a ribbon shape ion beam(53). The ion injection apparatus stops the beam starting operation completion detection process.
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申请公布号 |
KR20120025376(A) |
申请公布日期 |
2012.03.15 |
申请号 |
KR20110059969 |
申请日期 |
2011.06.21 |
申请人 |
NISSIN ION EQUIPMENT CO., LTD. |
发明人 |
NAITO MASAO |
分类号 |
H01J37/317;H01L21/265 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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