发明名称 METHOD OF ION IMPLANTATION AND SYSTEM THE SAME
摘要 PURPOSE: An ion injection method and apparatus are provided to precisely form ion implantation distribution by adjusting the beam current density distribution of an ion beam feeder. CONSTITUTION: An ion injection apparatus starts a beam starting operation of a plurality of ion beam feeders(50). The ion injection apparatus individually detects beam starting operation completion of a plurality of ion beam feeders(51). The ion injection apparatus sorts the ion beam feeder based on the result of a beam starting operation completion detection process(52). The ion injection apparatus adjusts the beam current density distribution of a ribbon shape ion beam(53). The ion injection apparatus stops the beam starting operation completion detection process.
申请公布号 KR20120025376(A) 申请公布日期 2012.03.15
申请号 KR20110059969 申请日期 2011.06.21
申请人 NISSIN ION EQUIPMENT CO., LTD. 发明人 NAITO MASAO
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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