| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of realizing enlargement of a pressure adjusting area in a processing chamber by making a vacuum container in such a shape that gas is easy to flow and at the same time adding a pressure adjustment mechanism thereto, as well as by using a gate valve as a variable conductance valve in the vacuum container to adjust a gas exhaust. <P>SOLUTION: Etching gas is arranged to flow at the upper part of an electrode part 211 of a processing chamber 210 in a plasma processing apparatus to generate plasma by applying an electric wave introduced by a discharger 200 so as to etch a wafer on the electrode part 211. The gas used for the etching treatment and particles of a product material and the like produced by the etching treatment are exhausted by an exhaust part 220; the gas and the particles of the product material and the like through a chamber 221, a gate valve 222, and a vacuum pump 223. As means to achieve a prescribed pressure at the time of the etching treatment, the chamber 221 with coax and capable of moving in the axial direction and the gate valve 222 capable of opening both left and right ways are used to control the pressure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
