| 发明名称 |
INTEGRATION OF BOTTOM-UP METAL FILM DEPOSITION |
| 摘要 |
A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
|
| 申请公布号 |
US2012064715(A1) |
申请公布日期 |
2012.03.15 |
| 申请号 |
US201113302520 |
申请日期 |
2011.11.22 |
| 申请人 |
LIN SIMON SU-HORNG;YANG CHI-MING;CHERN CHYI SHYUAN;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN SIMON SU-HORNG;YANG CHI-MING;CHERN CHYI SHYUAN;LIN CHIN-HSIANG |
| 分类号 |
H01L21/26 |
主分类号 |
H01L21/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
