发明名称 |
METHODS OF FORMING NON-VOLATILE MEMORY DEVICES INCLUDING LOW-K DIELECTRIC GAPS IN SUBSTRATES AND DEVICES SO FORMED |
摘要 |
A method of manufacturing a non-volatile memory device, can be provided by forming a gate insulating layer and a gate conductive layer on a substrate that includes active regions that are defined by device isolation regions that include a carbon-containing silicon oxide layer. The gate conductive layer and the gate insulating layer can be sequentially etched to expose the carbon-containing silicon oxide layer. The carbon-containing silicon oxide layer can be wet-etched to recess a surface of the carbon-containing silicon oxide layer to below a surface of the substrate. Then, an interlayer insulating layer can be formed between the gate insulating layer and the gate conductive layer on the carbon-containing silicon oxide layer, where an air gap can be formed between the carbon-containing silicon oxide layer and the gate insulating layer.
|
申请公布号 |
US2012061763(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113224427 |
申请日期 |
2011.09.02 |
申请人 |
LEE BO-YOUNG;CHOI JONG-WAN;HONG JIN-GI;LEE MYOUNG-BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BO-YOUNG;CHOI JONG-WAN;HONG JIN-GI;LEE MYOUNG-BUM |
分类号 |
H01L29/78;H01L21/283 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|