METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Provided is a group III nitride semiconductor light emitting element having excellent ohmic contact. In this group III nitride semiconductor light emitting element, a junction (JC) is inclined to the reference plane perpendicular to the C- axis of a gallium nitride semiconductor layer, and an electrode is joined to a semipolar surface of this gallium nitride semiconductor layer. However, the oxygen concentration in this gallium nitride semiconductor layer reduces the oxygen concentration in the gallium nitride semiconductor layer grown to form the junction (JC). Because the electrode is joined to the semipolar surface of this gallium nitride semiconductor layer, the metal/semiconductor junction exhibits excellent ohmic characteristics.