发明名称 NANOFLAT RESISTOR
摘要 A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); and nanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.
申请公布号 US2012062355(A1) 申请公布日期 2012.03.15
申请号 US200913321461 申请日期 2009.05.19
申请人 FARTASH ARJANG;MARDILOVICH PETER 发明人 FARTASH ARJANG;MARDILOVICH PETER
分类号 H01C1/012;B82Y30/00;B82Y40/00;H01C17/06 主分类号 H01C1/012
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