摘要 |
<p>The present invention provides an in-situ preparation method for a solar cell, which belongs to the technical field of solar cell manufacturing. Said method includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.</p> |
申请人 |
THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES;XIA, YANG;LIU, BANGWU;LI, CHAOBO;LIU, JIE;WANG, MINGGANG;LI, YONGTAO |
发明人 |
XIA, YANG;LIU, BANGWU;LI, CHAOBO;LIU, JIE;WANG, MINGGANG;LI, YONGTAO |