| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a sintered oxide for use in the production of an oxide semiconductor film, which does not contain gallium (Ga) which is an expensive element, or zinc (Zn) which is an element that causes problems with respect to the stability of the film; and an oxide semiconductor thin film having the same chemical composition as that of the sintered oxide. <P>SOLUTION: The sintered oxide is composed of indium (In), magnesium (Mg), a metal element X (wherein X represents at least one element selected from among Al, Fe, Sn and Ti), and oxygen (O), wherein the ratios of the number of atoms among indium (In), magnesium (Mg), and the metal element X respectively fulfil following inequalities: 0.2≤[In]/[In+Mg+X]≤0.8, 0.1≤[Mg]/[In+Mg+X]≤0.5, and 0.1≤[X]/[In+Mg+X]≤0.5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
