| 发明名称 |
COMPOSITION FOR FORMING SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-FORMED SUBSTRATE AND PATTERN FORMING METHOD USING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for a thermosetting silicon-containing film allowing formation of a silicon-containing film which can be used as a good dry etching mask and having good etching selectivity especially with a photoresist on an upper layer in a multilayer resist process. <P>SOLUTION: A composition for forming a thermosetting silicon-containing film is characterized by containing (A) a silicon-containing compound obtained by hydrolytic condensation of 1 kind or 2 kinds or more of hydrolyzable silicon compounds represented by the following general formula (1) with 1 kind or 2 kinds or more of compounds selected from the group consisting of a hydrolyzable silicon compound represented by the following general formula (2-1) and a reactive compound represented by the following general formula (2-2): R<SP POS="POST">1</SP><SB POS="POST">m1</SB>Si(OR<SP POS="POST">2</SP>)<SB POS="POST">(4-m1)</SB>(1)R<SP POS="POST">3</SP><SB POS="POST">m3</SB>Si(OR<SP POS="POST">4</SP>)<SB POS="POST">(4-m3)</SB>(2-1)U(OR<SP POS="POST">5</SP>)<SB POS="POST">m5</SB>(OR<SP POS="POST">6</SP>)<SB POS="POST">m6</SB>(O)<SB POS="POST">m7/2</SB>(2-2), (B) 1 kind or 2 kinds or more of certain thermal crosslinking accelerators, (C) a monovalent or divalent or higher organic acid having a carbon number of 1 to 30 and (D) an organic solvent. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012053253(A) |
申请公布日期 |
2012.03.15 |
| 申请号 |
JP20100195379 |
申请日期 |
2010.09.01 |
| 申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
OGIWARA TSUTOMU;UEDA TAKASHI;YANO TOSHIHARU;HASEGAWA KOJI |
| 分类号 |
G03F7/075;G03F7/11;G03F7/26;H01L21/027 |
主分类号 |
G03F7/075 |
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