| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device mounting two transistors, which can achieve a consolidated device of high reliability by preventing a short circuit between wires via a dummy wire. <P>SOLUTION: The semiconductor device of the present invention comprises: a micro CMOS region including a micro CMOS 4A and micro wiring 15 connected to the micro CMOS 4A; and a high voltage device region including a high-voltage device 4B having a breakdown voltage higher than that of the micro CMOS 4A, and drain wiring 115 and source wiring 116 each having a wiring width, viewed from above, wider than that of the micro wiring 15. In the high-voltage device region, electrically isolated dummy wiring 14 is not disposed at least next to the drain wiring 115 and the source wiring 116. <P>COPYRIGHT: (C)2012,JPO&INPIT |
