| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element which can improve thermal stability without increasing the write current. <P>SOLUTION: The storage element has a storage layer 17 in which the orientation of magnetization changes corresponding to information, a fixed magnetization layer 15 having magnetization perpendicular to the film surface and becoming the reference of information stored in the storage layer, and an intermediate layer 16 of a nonmagnetic material provided between the storage layer and the fixed magnetization layer. When spin polarized electrons are injected in the lamination direction, orientation of magnetization of the storage layer changes and recording of information is carried out. The storage layer includes an alloy region containing at least one of Fe and Co. Furthermore, in the storage layer, effective magnitude of an anti-magnetic field received during a magnetization inversion process is smaller than the saturation magnetization of the storage layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
