| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus that can improve manufacturing yield by removing a film adhered to a susceptor during an SiC epitaxial growth process. <P>SOLUTION: The semiconductor manufacturing apparatus comprises a deposition chamber 2 for forming an SiC epitaxial film on a wafer W loaded on a susceptor S and a cleaning chamber 5 connected to the deposition chamber 2 via a transportation chamber 4 having a transportation robot 17 transporting the susceptor S and removing an SiC film adhered to the susceptor S. The cleaning chamber 5 includes a heater 208 heating the susceptor S at a temperature higher than 400°C and etching gas supply means supplying an etching gas from above the susceptor S to remove the SiC film. The cleaning chamber 5 doubles with a reclaiming chamber for forming an SiC film on a surface of the susceptor S. <P>COPYRIGHT: (C)2012,JPO&INPIT |
