SEMICONDUCTOR LIGHT DETECTING ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

A photodiode PD1 is provided with an n−type semiconductor substrate 1 with a pn junction formed of a first conductivity type semiconductor region and a second conductivity type semiconductor region. For the n−type semiconductor substrate 1, an accumulation layer 7 is formed on the second principal surface 1b side of the n−type semiconductor substrate 1 and an irregular asperity 10 is formed at least in regions opposed to the pn junction in a first principal surface 1a and in the second principal surface 1b. The regions opposed to the pn junction in the first principal surface 1a and in the second principal surface 1b of the n−type semiconductor substrate 1 are optically exposed.