| 摘要 |
Disclosed is a low-cost hybrid storage solution that allows Code like sector-alterable NOR and Data like block-alterable NAND and byte-alterable EEPROM being integrated on a same die. The disclosed combo NVM design of the present invention is a truly Data-oriented NVM design that allows 2T-EEPROM to integrate both 0.5T-NAND and 1T-NOR without sacrificing any EEPROM's byte-write performance in the same die. The invention provides several new embodiment sets of preferable bias conditions of Program, Program-Inhibit, Erase and Erase-Inhibit for operating bit-write, byte-write, sector-write and page-write for several preferable Flotox-based EEPROM, NOR and NAND or combo NVM arrays that include types of shared SL, 8-pair BLs and SLS, with or without GBL, normally Erased Vt and Programmed Vt, or the reversed Erased-Vt or Programmed-Vt, etc. Further disclosed is a flexible X-decoder design to allow the flexible selection of pages to be erased to save erase time. Also disclosed is using on-chip negative voltage for FT's gate along with the less positive HV applied to FTs' channel region for same write performance but with the benefits of channel length reduction in cell and less BVDS electric requirement in peripheral devices for more scalable manufacturing process. |
