发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film. |
申请公布号 |
US2012061760(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113296919 |
申请日期 |
2011.11.15 |
申请人 |
KIM JOONG SIK;CHUNG SUNG WOONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM JOONG SIK;CHUNG SUNG WOONG |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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