THIN-FILM TRANSISTOR SUBSTRATE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE

摘要

An active matrix substrate (20a) is provided with: an insulating substrate (10a); a first thin-film transistor (5a) provided with a first gate electrode (11b) provided on the insulating substrate (10a) and a first oxide semiconductor layer (13a) having a first channel region (Ca); a second thin-film transistor (5b) provided with a second gate electrode (11c) provided on the insulating substrate (10a) and a second oxide semiconductor layer (13B) having a second channel region (Cb); and a second gate insulating film (17) covering the first oxide semiconductor layer (13a) and the second semiconductor layer (13b). Furthermore, third gate electrodes (25) are disposed on the second gate insulating film (17) so as to face the first channel region (Ca) and the second channel region (Cb) through the second gate insulating film (17).