| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a measurement apparatus for an extreme ultraviolet (EUV) light source. <P>SOLUTION: A system and method for "EUV light source" measurement are provided. In a first mode, a system for measuring an EUV light source power output includes a photoelectron raw material arranged along an EUV path, and the material is caused to be exposed for generating photoelectron in a curtain amount. The system, further, may include a detector which detects the photoelectron for generating an output representing EUV power. In another mode, the system for measuring EUV light intensity includes a multilayer mirror, for example Mo/Si, which can be arranged along the EUV light path, and can cause the mirror to be exposed for generating an optical current at the mirror. A current monitor can be connected to the mirror to measure the optical current to generate an output representing the EUV power. Further, in other mode, an off-line EUV measurement system can include an instrument for measuring an optical characteristic as well as an MoSi<SB POS="POST">2</SB>/Si multilayer mirror. <P>COPYRIGHT: (C)2012,JPO&INPIT |
