METHOD FOR TESTING DATA RETENTION CHARACTERISTICS OF RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

A method for testing data retention characteristics of a resistive random access memory (RRAM) device is provided. The method includes the following steps: a) Controlling the temperature of a sample platform, and keeping the RRAM device at a predetermined temperature; b) Setting the RRAM device to a high resistance state or a low resistance state; c) Applying a predetermined testing voltage to the RRAM device so as to make resistance state failures occur in the RRAM device, to measure the data retention time; d) Repeating steps a) -c) to implement several measurements; e) Using the data retention time of the several measurements to compute the resistance state failure probability F(t) of the RRAM device; and f) Fitting the resistance state failure probability F(t), and using the parameters obtained by the fitting to further compute the expected data retention time tE. Preferably, the data retention time of the RRAM device is anticipated based on the combination of voltage acceleration and temperature acceleration. The testing method can evaluate the data retention characteristics of the RRAM device accurately and rapidly.