SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.