| 摘要 |
<p>Disclosed is a chemical mechanical polishing solution, comprising: abrasive particles, an oxidant comprising halogen, organic amine, ethylene diamine tetraacetic acid (EDTA), and a pH regulator. The chemical mechanical polishing solution has an alkaline PH value. The polishing solution can realize a very high polishing speed with respect to both silicon and copper in an alkaline polishing environment. The polishing solution may be added with amino acid, so as to keep the removal rate of the silicon and copper stable.</p> |
