摘要 |
PROVIDING THROUGH-WAFER INTERCONNECTIONS IN A SEMICONDUCTOR WAFER (100) INCLUDES FORMING A SACRIFICIAL MEMBRANE (110) IN A PRE-EXISTING SEMICONDUCTOR WAFER, DEPOSITING METALLIZATION (124) OVER ONE SIDE OF THE WAFER (100) SO AS TO COVER EXPOSED PORTIONS OF THE SACRIFICIAL MEMBRANE FACING THE ONE SIDE OF THE WAFER, REMOVING EXPOSED PORTIONS OF THE SACRIFICIAL MEMBRANE FACING THE OTHER SIDE OF THE WAFER, AND DEPOSITING METALLIZATION (130) OVER THE OTHER SIDE OF THE WAFER (100) SO AS TO CONTACT THE PREVIOUSLY DEPOSITED METALLIZATION. TECHNIQUES ALSO ARE DISCLOSED FOR PROVIDING CAPACITIVE AND OTHER STRUCTURES USING THIN METAL MEMBRANES. |