发明名称 SEMICONDUCTOR MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method that can improve yield and reliability by inhibiting slip occurrence at temperature drop after wafer deposition. <P>SOLUTION: The semiconductor manufacturing method comprises the steps of transferring a wafer into a reaction chamber to load the wafer on a support member, supplying process gasses including a source gas on a surface of the wafer, depositing the surface of the wafer by heating the wafer to a predetermined temperature by controlling output of a heater with rotating the wafer at a first revolution speed, stopping supply of the source gas to reduce the revolution speed to a second revolution speed that can keep offset balance of the wafer, and stopping the output of the heater to drop a temperature of the wafer with rotating the wafer at the second revolution speed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012054327(A) 申请公布日期 2012.03.15
申请号 JP20100194323 申请日期 2010.08.31
申请人 NUFLARE TECHNOLOGY INC 发明人 MORIYAMA YOSHIKAZU;OTA YOSHIHISA
分类号 H01L21/205;C23C16/44;H01L21/316;H01L21/318 主分类号 H01L21/205
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