发明名称 |
IMAGE SENSOR WITH IMPROVED NOISE SHIELDING |
摘要 |
An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at least one of the device wafer or the carrier wafer to shield the pixel array from noise emanating from the signal lines. A through-silicon-via (“TSV”) extends through the carrier wafer and the metal noise shielding layer and extends into the device wafer to couple to circuitry within the device wafer. Further noising shielding may be provided by highly doping the carrier wafer and/or overlaying the bottom side of the carrier wafer with a low-K dielectric material. |
申请公布号 |
US2012061789(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US20100880916 |
申请日期 |
2010.09.13 |
申请人 |
YANG ZHENG;LI ZHENGYU;DAI TIEJUN;QIAN YIN;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
YANG ZHENG;LI ZHENGYU;DAI TIEJUN;QIAN YIN |
分类号 |
H01L27/146;H01L31/18 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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