| 摘要 |
There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x≦̸y≦̸4x, and 0.1(x+y)≦̸z≦̸0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and comes into contact with one face of the magnetic layer. |
