发明名称 |
STORAGE ELEMENT AND MEMORY DEVICE |
摘要 |
Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer. |
申请公布号 |
US2012061780(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113224369 |
申请日期 |
2011.09.02 |
申请人 |
UCHIDA HIROYUKI;HOSOMI MASANORI;OHMORI HIROYUKI;BESSHO KAZUHIRO;HIGO YUTAKA;YAMANE KAZUTAKA;SONY CORPORATION |
发明人 |
UCHIDA HIROYUKI;HOSOMI MASANORI;OHMORI HIROYUKI;BESSHO KAZUHIRO;HIGO YUTAKA;YAMANE KAZUTAKA |
分类号 |
H01L43/02 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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