发明名称 |
METHOD FOR FABRICATING CAPACITOR AND SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors. |
申请公布号 |
US2012061739(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113034038 |
申请日期 |
2011.02.24 |
申请人 |
KIM HYUN SEOK;LEE JUN HO;JUNG BOO HO;CHO SUN KI;KIM YANG HEE;KIM YOUNG WON;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM HYUN SEOK;LEE JUN HO;JUNG BOO HO;CHO SUN KI;KIM YANG HEE;KIM YOUNG WON |
分类号 |
H01L29/94;H01L21/8242 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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