PHOTODETECTOR AND CORRESPONDING DETECTION MATRIX

摘要

The invention relates to a photodetector intended for the detection of incident light radiation in the visible and close infrared region, said photodetector comprising: a light-radition-absorption structure (10) comprising a semiconductor material of index n1 and including a surface (13) exposed to the incident light radiation, and electrical connection means in contact with the aforementioned structure in order to convey a detection signal produced by the structure in response to the light radiation. The invention is characterised in that light-radiation-focusing means (12) are provided on the exposed surface (13), said means being formed by a single nanostructure having dimensions smaller than the wavelength of the light radiation in all directions of space.