SEMICONDUCTOR DEIVCES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a fabricating method thereof are provided to minimize parasitic capacitance by forming an air gap between wirings. CONSTITUTION: A contact part(150c) is extended downwardly from one part of a lower surface of a wiring(150a). The contact part passes through a mold layer(110). The contact part has the same width as that of the wiring. A top inter layer dielectric(103) is arranged on the wiring. An air gap is formed between wirings.