发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an LED device provided with a dam material, which can solve the problem occurring when disposing a reflection member such as a white resist, a silicon resin or the like in a region surrounded by the dam material such that it is necessary to apply photolithography or a printing method of high location accuracy. <P>SOLUTION: A reflective silicon resin 21 is coated by flow coating on a bottom part of a region surrounded by a dam material 11. At this time, a top face of the reflective silicon resin 21 is lower than a top face of an LED 22. It is favorable that a thickness of the reflective silicon resin 21 is approximately 30-50 &mu;m. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012054383(A) 申请公布日期 2012.03.15
申请号 JP20100195439 申请日期 2010.09.01
申请人 CITIZEN HOLDINGS CO LTD;CITIZEN ELECTRONICS CO LTD 发明人 TANMACHI KAZUAKI
分类号 H01L33/60;H01L33/54 主分类号 H01L33/60
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