| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of forming a high quality compound semiconductor with less residual stress on a substrate made of inexpensive silicon which can be easily increased in area. <P>SOLUTION: A silicon oxide film is formed on the surface of a silicon substrate 101, ions are implanted in a region on the lower layer side than the silicon oxide film, and then heat treatment is performed to form an underlying layer 102 made of single crystal silicon subjected to the ion implantation. Subsequently, the silicon oxide film is removed and the underlying layer 102 is thereby exposed. Thereafter, an AlN buffer layer 103, an AlGaN buffer layer 104, and a GaN layer 105 are formed on the underlying layer 102. <P>COPYRIGHT: (C)2012,JPO&INPIT |
