| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which is capable of increasing, for example, the rigidity of a hard mask. <P>SOLUTION: According to one embodiment, the method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes the steps of: forming a laminated structure, in which a lower layer consisting essentially of a carbon-based material, a first layer consisting essentially of silicon oxide or silicon nitride, and a second layer consisting essentially of silicon are laminated, on a layer to be processed; forming a line-and-space pattern on the laminated structure; selectively removing a region in the laminated structure which is exposed by the line-and-space pattern, to form a mask pattern having the laminated structure; and processing the layer to be processed, by using the mask pattern having the laminated structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
