| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laser processing apparatus capable of excellently forming a gas atmosphere in a laser irradiation part for a workpiece in the laser processing apparatus. <P>SOLUTION: The laser processing apparatus relatively scans and irradiates the workpiece on a sample stand 12 which has almost the same external size as that of the workpiece (amorphous semiconductor thin film 10 ) and where the whole of the workpiece is placed, with a laser light 3. The laser processing apparatus comprises: a gas jet part (laser light irradiating port-gas jet port 8) which jets the gas forming the irradiation atmosphere to a vicinity of the irradiated part of the workpiece; and end straightening planes (end straightening planes 17a,17b) provided on ends in the scanning direction of the sample stand 12 and extending along the scanning direction. The gas atmosphere at the end of the sample stand can be formed excellently in both of inside and outside in the scanning direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
