METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER

摘要

PURPOSE: A method for manufacturing a nitride semiconductor crystal layer is provided to suppress the generation of cracks by arranging islands at an interval which is not smaller than 0.1μm and not greater than 100μm. CONSTITUTION: Provided is a silicon crystal layer(40) on a base body(20). A nitride semiconductor crystalline layer(50) is formed on the silicon crystal layer. The nitride semiconductor crystalline layer has a first thickness. The silicon crystal layer has a second thickness before forming the nitride semiconductor crystalline layer. The second thickness is thinner than the first thickness.