| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a lateral diode capable of improving avalanche resistance while improving reverse recovery resistance by suppressing hole injection. <P>SOLUTION: An anode electrode 11 is Schottky-contacted or ohmic-contacted to a p<SP POS="POST">-</SP>-type low-impurity-concentration region 7 and is ohmic-contacted to a p<SP POS="POST">+</SP>-type high-impurity-concentration region 8. A p<SP POS="POST">+</SP>-type anode expansion region 9 is provided on a side more distant from a cathode electrode 10 than the p<SP POS="POST">-</SP>-type low-impurity-concentration region 7 and the p<SP POS="POST">+</SP>-type high-impurity-concentration region 8. The electrical connection of the anode electrode 11 to the p<SP POS="POST">-</SP>-type low-impurity-concentration region 7 reduces electron injection, thereby reducing hole injection even if the same amount of current flows. As a result, the reverse recovery resistance can be improved by reducing a reverse recovery charge Qrr. Additionally, the provision of the p<SP POS="POST">+</SP>-type anode expansion region 9 can enhance the avalanche resistance. <P>COPYRIGHT: (C)2012,JPO&INPIT |
