摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor deposition material containing metal silicon and silicon oxide and inhibiting the occurrence of splash phenomenon, and to provide a gas-barrier vapor deposition film deposited using the material. <P>SOLUTION: There is provided a heating-system vapor deposition material prepared by blending the silicon oxide and metal silicon. The silicon oxide is silicon dioxide having the atomicity ratio (O/Si) of oxygen to silicon of 1.50 to 1.70, the bulk density of 0.9 to 1.1 g/cm<SP POS="POST">3</SP>, and including at least 20% of its crystal structure. The film deposited using the material is also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |