发明名称 VAPOR DEPOSITION MATERIAL, AND GAS BARRIER VAPOR DEPOSITION FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a vapor deposition material containing metal silicon and silicon oxide and inhibiting the occurrence of splash phenomenon, and to provide a gas-barrier vapor deposition film deposited using the material. <P>SOLUTION: There is provided a heating-system vapor deposition material prepared by blending the silicon oxide and metal silicon. The silicon oxide is silicon dioxide having the atomicity ratio (O/Si) of oxygen to silicon of 1.50 to 1.70, the bulk density of 0.9 to 1.1 g/cm<SP POS="POST">3</SP>, and including at least 20% of its crystal structure. The film deposited using the material is also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012052154(A) 申请公布日期 2012.03.15
申请号 JP20100193363 申请日期 2010.08.31
申请人 TOPPAN PRINTING CO LTD 发明人 HAYASHI JUNPEI
分类号 C23C14/24;B32B9/00 主分类号 C23C14/24
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