| 摘要 |
Provided is a power converting apparatus wherein degree of freedom with respect to component layout is increased. A switching element (10) is formed of a wide band gap semiconductor that can be operated at a high temperature, and is disposed in a high-temperature region in the upper portion in a housing (1). Temperature distribution in the housing (1) is made clearer by disposing the switching element (10), with a reactor (12), in the high-temperature region in the upper portion in the housing (1), and the temperature of a low-temperature region in the lower portion in the housing (1) is kept low, said low-temperature region having low heat-generating components, such as an electrolytic capacitor (11) and a relay (13), disposed therein. |
