| 摘要 |
A method of patterning an insulation layer is described. The method includes preparing a feature pattern in an insulation layer using at least one hard mask layer formed on the insulation layer, where the insulation layer contains a low-k material having a dielectric constant less than the dielectric constant of SiO2. The method further includes removing the at least one hard mask layer to expose a flat field surface of the insulation layer and, following the removing, forming a passivation layer on the flat field surface to protect the insulation layer using gas cluster ion beam (GCIB) irradiation of the insulation layer, wherein the GCIB irradiation is configured to grow or deposit the passivation layer on the flat field surface. |
