| 摘要 |
In a silicon manufacturing apparatus and its related manufacturing method, a zinc gas supply opening (18b, 180b, 181b, 182b, 183b, 184b, 185b, 280a) is placed above a silicon tetrachloride gas opening (16a, 160a). A part of a reactor (10, 100), heated by a heater (22), is set to a silicon depositing temperature range, during which silicon tetrachloride gas is supplied from the silicon tetrachloride gas opening to the reactor to which zinc gas is supplied from the zinc gas supply opening, whereby silicon tetrachloride is reduced with zinc in the reactor to form a silicon depositing region (S), in which silicon is deposited on a wall portion in the reactor corresponding to a region thereof that is set to the silicon depositing temperature range. |
