发明名称 |
Nonvolatile Memory Device and Method of Manufacturing the Same |
摘要 |
A method of manufacturing a nonvolatile memory device wherein first gate lines and second gate lines are formed over a semiconductor substrate. The first gate lines are spaced-from each other at a first width, the second gate lines are spaced-from each other at a second width, and the first width is wider than the second width. A first ion implantation process of forming first junction regions in the semiconductor substrate between the first gate lines and the second gate lines is performed. A second ion implantation process of forming second junction regions in the respective first junction regions between the first gate lines is then performed. |
申请公布号 |
US2012061770(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113298096 |
申请日期 |
2011.11.16 |
申请人 |
LEE HEE YOUL;NOH JAE YOON;HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE HEE YOUL;NOH JAE YOON |
分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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