| 摘要 |
A thermal infrared sensor includes an infrared ray absorbing film that is thermally separated from a semiconductor substrate by a hollow part; and a temperature sensor configured to detect temperature changes of the infrared ray absorbing film. The infrared ray absorbing film includes an infrared ray antireflection structure configured with a sub wavelength structure, the infrared ray antireflection structure being provided on a surface of the infrared ray absorbing film facing the semiconductor substrate. |
