| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon thin film, a manufacturing method of a silicon thin film solar cell, and a silicon thin film. <P>SOLUTION: In the manufacturing method of a silicon thin film, an inactive layer 38 in which growth of a silicon crystal 12 is inactive with respect to material gas 28 of the silicon crystal 12 is selectively formed on a silicon substrate 32 to form an exposure surface 34 of the silicon substrate 32 and an inactive surface 36 by an inactive layer 38; and the material gas 28 having a property where a surface decomposition reaction is dominant in the silicon substrate 32, out of the material gas 28, is supplied to the silicon substrate 32 to make the silicon crystal 12 grow from the exposure surface 34 so that a silicon thin film 10 is manufactured in a mode in which the silicon substrate is covered by the silicon crystal 12. A width of the exposure surface 34 is formed in the range of 0.001 μm to 1 μm, thereby the silicon thin film 10 is formed in the state where it can be exfoliated from the silicon substrate 32. <P>COPYRIGHT: (C)2012,JPO&INPIT |
