| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device that can suppress deterioration of a high-frequency property caused by capacitance increase and insulation breakdown caused by a rear face electrode, and that can extract and discharge holes generated by impact ionization easily and certainly without increasing a chip area, and that realizes a high pressure resistance and a high reliability, and to provide a method of manufacturing the same. <P>SOLUTION: An electron travel layer 3 and an electron supply layer 4 are formed on a surface of an insulating or semi-insulating substrate 1. A local p-type region 7 is formed in the electron supply layer 4. An opening 1a that exposes a part of the p-type region 7 is formed on a rear face of the substrate 1. The opening 1a is filled with a conductive material to provide a rear face electrode 8 ohmic-contacted with the p-type region 7. Then, an AlGaN/GaN HEMT (High Electron Mobility Transistor) is configured. <P>COPYRIGHT: (C)2012,JPO&INPIT |
