发明名称 SPUTTERING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus that can form a film on a substrate surface at high speed without doing damage to the surface and is less likely to cause abnormal electrical discharge. <P>SOLUTION: The sputtering apparatus 10 includes: first and second cylindrical sputter targets provided apart from each other in a chamber; a voltage-applying unit for applying voltages to the first and second cylindrical sputter targets, respectively; a gas-introducing system 70 for introducing a sputter gas into the chamber; a first magnet device 60A provided in the first cylindrical sputter target and having a magnet that faces the second cylindrical sputter target; and a second magnet device 60B provided in the second cylindrical sputter target, having a magnet that faces the magnet of the first magnet device, and forming magnetic fields between the first and second magnet devices. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012052191(A) 申请公布日期 2012.03.15
申请号 JP20100196170 申请日期 2010.09.01
申请人 ULVAC JAPAN LTD 发明人 IWAI HARUNORI;KUBO MASASHI;OZAWA TAKAYUKI
分类号 C23C14/35 主分类号 C23C14/35
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