METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device which prevents a formation of a high concentration layer on a bottom of a trench when, for example, the trench is rounded to configure a trench gate structure.

SOLUTION: The method for manufacturing a SiC semiconductor device comprises: a step for forming a trench 6 before formation of an n+type source region 4; a step for executing rounding processing of the trench 6; an ion implanting and an activation annealing steps for forming the n+type source region 4 in a state that a resist 21 covers in the trench 6. Therefore the n+type source region 4 is moved in the activation annealing step, in addition to the rounding processing of the trench 6, thereby an n-type high concentration layer is prevented from being formed on the bottom of the trench 6. The method for manufacturing the SiC semiconductor device prevents the formation of the n-type high concentration layer on the bottom of the trench 6 when the trench 6 is rounded to configure the trench gate structure.

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