发明名称 |
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE |
摘要 |
A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate 1 is a silicon carbide substrate capable of making effective use of silicon carbide single crystal.
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申请公布号 |
US2012061686(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201013319560 |
申请日期 |
2010.04.27 |
申请人 |
NISHIGUCHI TARO;SASAKI MAKOTO;HARADA SHIN;FUJIWARA SHINSUKE;NAMIKAWA YASUO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIGUCHI TARO;SASAKI MAKOTO;HARADA SHIN;FUJIWARA SHINSUKE;NAMIKAWA YASUO |
分类号 |
H01L29/02;H01L21/762 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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