| 摘要 |
According to one embodiment, a semiconductor device including a substrate, and an anti-fuse element including a first insulator formed on the substrate, a conductive film formed on the first insulator, the conductive film including a silicide film, a contact formed on the substrate, the contact being disposed adjacent to the conductive film with a second insulator interposed between the contact and the conductive film, the contact being short-circuited to the silicide film. |
