| 摘要 |
<p>PURPOSE: An organic light emitting diode display with a washed polycrystalline silicon layer and a manufacturing method thereof are provided to uniformly etch a native oxide film by generating atmospheric pressure plasma having uniform density between a driving electrode and a ground electrode through a wide area. CONSTITUTION: A thin film transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. An organic light emitting device(67) is connected to the thin film transistor. The organic light emitting device includes a pixel electrode, an organic light emitting layer, and a common electrode. The semiconductor layer is formed into a polycrystalline silicon layer. The semiconductor layer is formed into the polycrystalline silicon layer washed with atmospheric pressure plasma processing.</p> |
