| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine pattern forming method which can suppress the inclination of a sidewall part even in the case of forming, by resist, a pattern, which makes a base for forming the sidewall part. <P>SOLUTION: Disclosed is a fine pattern forming method comprising: an organic film forming step for forming an organic film on a layer for etching formed on a substrate; a patterning step for forming a resist film on the organic film and patterning the resist film; a deposition step for depositing a silicon oxide film to cover part of the organic film exposed from the patterned resist film, and the patterned resist film at a room temperature; a heating step for heating the substrate to cause a tensile stress in the silicon oxide film; a first etching step for etching the silicon oxide film to leave part of it on a sidewall of the patterned resist film after the heating step; and a removing step for removing the patterned resist film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
